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| ESAC83M-004 (20A) SCHOTTKY BARRIER DIODE 15.5 0.3 (40V / 20A ) Outline drawings, mm o3.2 0.2 5.5 0.2 9.3 0.3 5.5 0.3 3.2 +0.3 2.3 0.2 2.10.3 1.6 0.3 1.1 --0.1 +0.2 20 Min 21.5 0.3 5.45 0.2 5.45 0.2 0.6 +0.2 3.5 0.2 Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design 1. Gate 2. Drain 3. Source JEDEC EIAJ Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM Io IFSM Tj Tstg tw=500ns, duty=1/40 Square wave, duty=1/2 Tc=79C Sine wave 10ms Conditions Rating 40 48 20* 120 -40 to +150 -40 to +150 Unit V V A A C C * Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=8A VR=VRRM Junction to case Max. 0.55 15 2.5 Unit V mA C/W (40V / 20A ) Characteristics Forward characteristics 50 30 10 ESAC83M-004 (20A) Reverse characteristics IF [A] 10 5 3 IR [mA] 1 0.1 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 10 20 30 40 50 60 70 VF [V] VR [V] Forward power dissipation 20 7.5 Reverse power dissipation 16 WF [W] 5.0 WR 12 [W] 8 2.5 4 0 0 5 10 15 0 0 10 20 30 40 50 Io [A] VR [V] Output current-case temperature 140 3000 Junction capacitance characteristics 120 Tc [C ] 100 Cj 1000 500 [pF] 80 300 60 100 0 2 4 6 8 10 12 14 16 18 20 5 10 30 50 100 Io [A] VR [V] (40V / 20A ) Surge capability 300 ESAC83M-004 (20A) 100 IFSM [A] 50 30 10 1 3 5 10 30 [time] (at 50Hz) Transient thermal impedance 10 1 [C/W] 100 10-1 10-3 10-2 10-1 100 101 102 t [sec.] |
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